Ufs 3.1 Pinout -
Universal Flash Storage (UFS) 3.1 is the high-performance storage standard designed for the 5G era, offering significant speed and power efficiency improvements over previous generations. Understanding its pinout is critical for hardware engineers and developers tasked with integrating this storage into mobile, automotive, and AR/VR systems. The Core Architecture: Low Pin Count, High Speed
Unlike the parallel interface used in older eMMC standards, UFS 3.1 utilizes a serial interface based on the MIPI M-PHY and UniPro specifications. This design choice allows for a significantly lower pin count, which simplifies PCB routing and reduces the physical footprint on space-constrained mobile motherboards.
The physical interface typically resides in a 153-ball BGA (Ball Grid Array) package, which is standard for high-density flash storage. Key Functional Pin Categories
The UFS 3.1 pinout is strategically organized into three primary functional groups: data transmission, power supply, and control/clocking. High-Speed Data Lanes (M-PHY):
TX_DP/TX_DN: Differential transmit pairs for data sent from the host to the UFS device.
RX_DP/RX_DN: Differential receive pairs for data sent from the device to the host.
UFS 3.1 supports dual-lane operation, meaning it can utilize two sets of these differential pairs to double its bandwidth, reaching sequential read speeds up to 2,100 MB/s. Power Supply Pins:
VCC: The main power supply for the NAND flash memory, typically operating at 2.5V or 3.3V.
VCCQ: The power supply for the UFS controller and I/O interface, usually 1.2V.
VCCQ2: An additional supply used in some configurations for low-voltage interface operations. Reference Clock and Control:
REF_CLK: A square wave single-ended reference clock input. While UFS can operate without this in low-speed modes (using self-clocked PWM signaling), the reference clock is required for High-Speed (HS) modes to ensure low bit-error rates and fast PLL locking. RST_N: A hardware reset pin used to initialize the device. Hardware Integration and Signal Integrity ufs 3.1 pinout
UFS 3.1 | Universal Flash Storage | Samsung Semiconductor Global
standard (JESD220E) typically uses a 153-ball BGA (Ball Grid Array) package, similar to previous UFS generations like 2.1 and 3.0, but with updated electrical specifications for higher speeds. Key Signals and Power Rails
UFS 3.1 utilizes a differential serial interface (M-PHY) with up to two lanes for data transfer. Mouser Electronics Data Lanes (Differential Pairs): DIN_t / DIN_c: Input data lanes (Host to Device). DOUT_t / DOUT_c: Output data lanes (Device to Host). Power Supplies: VCC (2.7V – 3.6V): Main power for the NAND flash media. VCCQ (1.14V – 1.26V): Power for the UFS controller and I/O interface. VCCQ2 (1.7V – 1.95V):
Typically used for the M-PHY layer or other low-voltage internal modules. Control Signals:
Reference clock input (square wave, single-ended), critical for High-Speed (HS) modes. Hardware reset signal (active low). Mouser Electronics Pin Assignment Groups (153-Ball BGA)
While the full 153-ball map contains many ground (GND) and "No Connect" (NC) pins, the critical functional pins are clustered as follows: Core Voltage
Typically multiple pins (e.g., A3, B3, C3) for current capacity. I/O Voltage Low voltage rail (1.2V typical). PHY Voltage Mid-range voltage rail (1.8V typical). Transmit Pairs
Differential output signals from host view (DIN for device). Receive Pairs
Differential input signals from host view (DOUT for device). Reference Clock Necessary for HS-G3 and HS-G4 modes. System reset pin. In-System Programming (ISP) Points
For data recovery or forensic tasks, "ISP" refers to soldering directly to specific test points on a PCB rather than the full BGA grid. Common ISP connections for UFS 3.1 include: VCC & VCCQ TX0_P/N & RX0_P/N (Data Lane 0) Some UFS 3.1 implementations require a 10-ohm resistor Universal Flash Storage (UFS) 3
on the TX line to ground to enable communication with certain flasher boxes. ball-by-ball map
for a specific package size, such as the 11.5mm x 13mm variant?
JEDEC Publishes Update to Universal Flash Storage (UFS) Standard 30 Jan 2020 —
UFS 3.1 introduces new features intended to help maximize device performance while minimizing power usage. 153-Ball Automotive UFS Memory - Mouser Electronics
Universal flash storage (UFS) controller and NAND. Differential I/O pins. – 2 lanes supported. – High speed: Gear 1/2/3 supported. Mouser Electronics
UFS 3.1协议分析(第六章) -- UFS电气信号 - CSDN博客 22 Sept 2021 —
UFS信号 UFS供电 复位 参考时钟. UFS有三个供电电压,分别是VCC、VCCQ、VCCQ2。 ufs3.1中规定的电压值范围为: VCC从300mV上升到2.4V / 2.7V时间为35ms. CSDN博客 UNIVERSAL FLASH STORAGE (UFS 3.1)
* Deep Sleep(mA) VCCQ(1.2V) VCC(2.5V) VCCQ(1.2V) 537. 124. 439. 0.36. 0.05. 0.15. 0.06. „Mouser Electronics“ Lietuva Samsung UFS Card 7 Apr 2016 —
3. Power Supply Requirements (Critical for 3.1)
| Rail | Voltage | Ripple max | Typical current (active) | Purpose | |------|---------|------------|--------------------------|---------| | VCC | 2.5V – 3.6V | 100 mV | Up to 1.5A | NAND flash core | | VCCQ | 1.14V – 1.26V | 50 mV | 200-400 mA | Controller logic & UniPro PHY | | VCCQ2 | 1.7V – 1.95V or NC | 50 mV | ~100 mA | Optional for 1.8V I/O (e.g., UFS-to-host sideband) |
- Use separate power sequencing: VCC first, then VCCQ, or simultaneous.
- Decoupling: 10µF + 0.1µF per power ball pair. For VCC, add 47µF bulk capacitor.
Conclusion
The UFS 3.1 pinout represents a sophisticated leap from the parallel legacy of eMMC. By utilizing differential serial lanes (DATAIN/OUT), a dedicated reference clock (REFCLK), and dual-voltage power rails (VCC and VCCQ2), UFS 3.1 achieves the bandwidth necessary for 4K video recording, high-speed app loading, and rapid file transfers. Use separate power sequencing: VCC first, then VCCQ,
Whether you are a PCB designer implementing a storage subsystem or a technician performing board-level repairs, understanding that UFS requires a host-generated clock and strict differential pair integrity is the key to successfully working with this technology.
⚠️ Important Note: UFS 3.1 uses M-PHY 4.1 (Gear 4) and UniPro 1.8. While the pinout is physically compatible with UFS 2.x, high-speed signals (Rx/Tx) require stricter PCB layout. Always verify with the specific component datasheet (e.g., Samsung, Kioxia, Micron, SK Hynix).
1. The Shift from Parallel to Serial
To understand the pinout, one must first understand the architecture. eMMC relied on a parallel bus (8 data lines) to transfer data. UFS uses a serial interface with differential signaling, similar to SATA or PCI Express, but specifically optimized for low power consumption.
UFS 3.1 features two full-duplex lanes (Lane 0 and Lane 1). Unlike eMMC, where data travels in both directions over the same lines (half-duplex), UFS can read and write simultaneously.
This architectural shift means the pinout is significantly different. Instead of a wide bus of data pins, UFS focuses on differential pairs for high-speed serial transmission.
Common Failure Modes & Pinout Checks:
| Symptom | Pin to Check | Volt/Action | | :--- | :--- | :--- | | Device not detected in BIOS/OS | VCC | Measure at ball (not periphery). Low voltage <2.5V. | | Intermittent read errors | DOUT_T0_P/M | Check AC coupling caps (100nF). Open or shorted cap kills signal. | | High power consumption | VCCQ | RST_N floating high? Pull it actively. | | Failed DFU (Device Firmware Update) | REF_CLK_P/N | High jitter or wrong frequency. Host PLL issue. |
Scenario A: Reading UFS via Adapter (e.g., EasyJTAG, Medusa Pro)
- Connect: VCC, VCCQ, GND, REF_CLK, RXP/RXN, TXP/TXN, RST_n.
- Probe order: Power first, then clock, then reset high. Never hot-plug differential lanes.
- Voltage mismatch: Most adapters support 1.8V. If your board uses 1.2V for VCCQ, use level shifters.
Decoding the UFS 3.1 Pinout: A Guide to High-Speed Storage Connectivity
The Universal Flash Storage (UFS) 3.1 standard has become the gold standard for embedded storage in flagship smartphones, automotive systems, and high-end IoT devices. While its impressive read/write speeds (up to 2100 MB/s) and low power consumption are well-publicized, the physical interface—the pinout—is often misunderstood or overlooked. This essay provides a clear, practical breakdown of the UFS 3.1 pinout, explaining its critical signals, common pitfalls, and how to use this knowledge for repair, data recovery, or hardware design.
Part 7: Manufacturers vs. Datasheets – The NDA Wall
One of the greatest frustrations is that vendors (Samsung, Kioxia, Western Digital) rarely publish public datasheets for UFS 3.1 pinouts. You will encounter:
- Samsung KLUEG8UHDC – No public pinout. Requires interposer reverse-engineering.
- Kioxia THGJFGT1E45BAIP – Detailed only under NDA with an OEM.
*Pro Tip: * Use open-source hardware databases (e.g., from Pine64 or Raspberry Pi CM4 carrier boards) or schematics of older flagship phones (Google Pixel 6, OnePlus 9) which often leak detailed UFS pinouts.
7. Quick Reference – UFS 3.1 vs eMMC 5.1
| Feature | UFS 3.1 | eMMC 5.1 | | :--- | :--- | :--- | | Interface | Differential serial (M-PHY) | Parallel (8-bit) | | Pins used for data | 4 or 8 (RXP/N, TXP/N x2) | 12-16 (CMD, CLK, DAT[0:7]) | | Voltage | 1.2/1.8/3.3V | 1.8/3.3V | | Full duplex | Yes | No | | Minimum pin count for operation | 7 (VCC, VCCQ, GND, CLK, RX±, RST) | 9 (VCC, VCCQ, GND, CLK, CMD, DAT0) |